JPS6237890B2 - - Google Patents

Info

Publication number
JPS6237890B2
JPS6237890B2 JP57049008A JP4900882A JPS6237890B2 JP S6237890 B2 JPS6237890 B2 JP S6237890B2 JP 57049008 A JP57049008 A JP 57049008A JP 4900882 A JP4900882 A JP 4900882A JP S6237890 B2 JPS6237890 B2 JP S6237890B2
Authority
JP
Japan
Prior art keywords
insulating film
conductive layer
junction
opening
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57049008A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58166774A (ja
Inventor
Yasuhiro Ishii
Yoshimoto Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP57049008A priority Critical patent/JPS58166774A/ja
Publication of JPS58166774A publication Critical patent/JPS58166774A/ja
Publication of JPS6237890B2 publication Critical patent/JPS6237890B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57049008A 1982-03-29 1982-03-29 シヨツトキ接合形化合物半導体電界効果トランジスタの製造方法 Granted JPS58166774A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57049008A JPS58166774A (ja) 1982-03-29 1982-03-29 シヨツトキ接合形化合物半導体電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57049008A JPS58166774A (ja) 1982-03-29 1982-03-29 シヨツトキ接合形化合物半導体電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS58166774A JPS58166774A (ja) 1983-10-01
JPS6237890B2 true JPS6237890B2 (en]) 1987-08-14

Family

ID=12819128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57049008A Granted JPS58166774A (ja) 1982-03-29 1982-03-29 シヨツトキ接合形化合物半導体電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS58166774A (en])

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0644576B2 (ja) * 1983-01-13 1994-06-08 日本電気株式会社 半導体装置
JPS59127871A (ja) * 1983-01-13 1984-07-23 Nec Corp 半導体装置の製造方法
JPS59193070A (ja) * 1983-04-15 1984-11-01 Nec Corp シヨツトキゲ−ト電界効果トランジスタの製造方法
JPS6085567A (ja) * 1983-10-17 1985-05-15 Mitsubishi Electric Corp 電界効果トランジスタ
JPS61241980A (ja) * 1985-04-18 1986-10-28 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPS58166774A (ja) 1983-10-01

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